HM60N03K Datasheet. Specs and Replacement

Type Designator: HM60N03K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO252

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HM60N03K datasheet

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HM60N03K

HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON) ... See More ⇒

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HM60N03K

HM60N03D N-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON) ... See More ⇒

 7.2. Size:677K  cn hmsemi
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HM60N03K

HM60N03 N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON) ... See More ⇒

 8.1. Size:892K  cn hmsemi
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HM60N03K

HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON) ... See More ⇒

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Detailed specifications: HM603K, HM607K, HM609BK, HM609K, HM60N02, HM60N02K, HM60N03, HM60N03D, 2N60, HM60N04, HM60N04K, HM60N05, HM60N05K, HM60N06, HM60N06K, HM60N08, HM60N10D

Keywords - HM60N03K MOSFET specs

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