HM6N10 Datasheet and Replacement
Type Designator: HM6N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO92
HM6N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM6N10 Datasheet (PDF)
hm6n10r.pdf
HM6N10R N-Channel Enhancement Mode Power MOSFET Description D The HM6N10R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON) ... See More ⇒
Datasheet: HM6602 , HM6604 , HM6620 , HM6800 , HM6801 , HM6803 , HM6804 , HM6804D , IRF540 , HM6N10PR , HM6N10R , HM6N70 , HM6N70F , HM6N70I , HM6N70K , HM6N80K , HM6N90 .
Keywords - HM6N10 MOSFET datasheet
HM6N10 cross reference
HM6N10 equivalent finder
HM6N10 lookup
HM6N10 substitution
HM6N10 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
LIST
Last Update
MOSFET: AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q | AP25N06K | AP2335 | AP2318A | AP2317SD | AP2317QD | AP2317A | AP2316 | AP2310 | AP2301B | AP20P30S
Popular searches
2n388 | 2n3645 | 2n1307 | 2sa747 | a1941 | 2sd424 datasheet | 2sc536 datasheet | bd140 transistor equivalent