HM730F Spec and Replacement
Type Designator: HM730F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
HM730F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM730F Specs
hm730 hm730f.pdf
HM730 / HM730F 400V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 6.0A, 400V, RDS(on) = 1.00 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 18nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche t... See More ⇒
chm730gpagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM730GPAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 400 Volts CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) .035 (0.89) .08... See More ⇒
Detailed specifications: HM70N80A , HM70N88 , HM70N90D , HM70P02D , HM70P03 , HM70P03K , HM70P04 , HM730 , IRFP260 , HM740 , HM740F , HM75N06 , HM75N06K , HM75N07K , HM75N20 , HM75N75 , HM75N75K .
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