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HM7N80F Spec and Replacement


   Type Designator: HM7N80F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 27 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO220F

 HM7N80F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM7N80F Specs

 ..1. Size:328K  cn hmsemi
 hm7n80 hm7n80f.pdf pdf_icon

HM7N80F

HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 27nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin... See More ⇒

 8.1. Size:491K  cn hmsemi
 hm7n80d.pdf pdf_icon

HM7N80F

HM7N80D General Description VDSS 800 V , the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 185 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization ... See More ⇒

Detailed specifications: HM7N60I , HM7N60K , HM7N65 , HM7N65F , HM7N65I , HM7N65K , HM7N80 , HM7N80D , IRFP250 , HM80N03 , HM80N03A , HM80N03I , HM80N03K , HM80N03KA , HM80N04 , HM80N04K , HM80N05K .

Keywords - HM7N80F MOSFET specs

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