All MOSFET. HM90N06D Datasheet

 

HM90N06D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM90N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 88 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00754 Ohm
   Package: DFN5X6

 HM90N06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM90N06D Datasheet (PDF)

 ..1. Size:628K  cn hmsemi
 hm90n06d.pdf

HM90N06D HM90N06D

HM90N06DN-Channel Trench Power MOSFETGeneral DescriptionThe HM90N06D is N-channel MOS Field Effect Transistordesigned for high current switching applications. RuggedEAS capability and ultra low R is suitable for PWM,DS(ON)load switching especially for E-Bike controller applications.Top ViewFeatures V =65V; I =88A@ V =10V;DS D GSR

 8.1. Size:433K  cn hmsemi
 hm90n04d.pdf

HM90N06D HM90N06D

HM90N04DN-Channel Enhancement Mode Power MOSFET Description The HM90N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top