HM90N06D Datasheet and Replacement
Type Designator: HM90N06D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 139 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 460 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00754 Ohm
Package: DFN5X6
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HM90N06D Datasheet (PDF)
hm90n06d.pdf

HM90N06DN-Channel Trench Power MOSFETGeneral DescriptionThe HM90N06D is N-channel MOS Field Effect Transistordesigned for high current switching applications. RuggedEAS capability and ultra low R is suitable for PWM,DS(ON)load switching especially for E-Bike controller applications.Top ViewFeatures V =65V; I =88A@ V =10V;DS D GSR
hm90n04d.pdf

HM90N04DN-Channel Enhancement Mode Power MOSFET Description The HM90N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2SK313 | SMF14N65 | RSD150N06FRA | TTX2305A | IRFL014 | RQ6C050UN | 2SK2051-S
Keywords - HM90N06D MOSFET datasheet
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History: 2SK313 | SMF14N65 | RSD150N06FRA | TTX2305A | IRFL014 | RQ6C050UN | 2SK2051-S



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