HM90N06D Datasheet. Specs and Replacement

Type Designator: HM90N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00754 Ohm

Package: DFN5X6

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HM90N06D datasheet

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HM90N06D

HM90N06D N-Channel Trench Power MOSFET General Description The HM90N06D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, DS(ON) load switching especially for E-Bike controller applications. Top View Features V =65V; I =88A@ V =10V; DS D GS R ... See More ⇒

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HM90N06D

HM90N04D N-Channel Enhancement Mode Power MOSFET Description The HM90N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =90A RDS(ON) ... See More ⇒

Detailed specifications: HM8N20, HM8N20A, HM8N20I, HM8N20K, HM8N20KA, HM8N25K, HM8P02MR, HM90N04D, IRF840, HM9435, HM9435A, HM9435B, HM9436, HM9926, HM9926B, HM9N90F, HMS100N85D

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