HMS18N10Q Datasheet and Replacement. Cross Reference Search

HMS18N10Q Datasheet (PDF)

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HMS18N10QN-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

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HMS18N10DN-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)

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HMS18N80,HMS18N80FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industrys ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio

Datasheet: HMS15N70F , HMS15N70I , HMS15N70K , HMS170N03D , HMS17N65 , HMS17N65D , HMS17N65F , HMS18N10D , IRF1407 , HMS18N80 , HMS18N80F , HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A , HMS21N60F , HMS21N65 .