HMS18N80F Datasheet and Replacement
Type Designator: HMS18N80F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
HMS18N80F substitution
HMS18N80F Datasheet (PDF)
hms18n80 hms18n80f.pdf

HMS18N80,HMS18N80FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industrys ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio
hms18n10q.pdf

HMS18N10QN-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)
hms18n10d.pdf

HMS18N10DN-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON)
Datasheet: HMS15N70K , HMS170N03D , HMS17N65 , HMS17N65D , HMS17N65F , HMS18N10D , HMS18N10Q , HMS18N80 , IRFP450 , HMS200N04D , HMS20N15K , HMS21N60 , HMS21N60A , HMS21N60F , HMS21N65 , HMS21N65A , HMS21N65F .
History: AP60WN1K5H
Keywords - HMS18N80F MOSFET datasheet
HMS18N80F cross reference
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History: AP60WN1K5H



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