HMS18N80F Datasheet. Specs and Replacement

Type Designator: HMS18N80F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220F

HMS18N80F substitution

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HMS18N80F datasheet

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HMS18N80F

HMS18N80,HMS18N80F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industry s ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio... See More ⇒

 8.1. Size:1002K  cn hmsemi
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HMS18N80F

HMS18N10Q N-Channel Enhancement Mode Power MOSFET Description The HMS18N10Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON) ... See More ⇒

 8.2. Size:1354K  cn hmsemi
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HMS18N80F

HMS18N10D N-Channel Enhancement Mode Power MOSFET Description The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =18A RDS(ON) ... See More ⇒

Detailed specifications: HMS15N70K, HMS170N03D, HMS17N65, HMS17N65D, HMS17N65F, HMS18N10D, HMS18N10Q, HMS18N80, AO4407, HMS200N04D, HMS20N15K, HMS21N60, HMS21N60A, HMS21N60F, HMS21N65, HMS21N65A, HMS21N65F

Keywords - HMS18N80F MOSFET specs

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