All MOSFET. HMS25N65F Datasheet

 

HMS25N65F Datasheet and Replacement


   Type Designator: HMS25N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220F
 

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HMS25N65F Datasheet (PDF)

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HMS25N65F

HMS25N65/HMS25N65D/HMS25N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 115 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

Datasheet: HMS21N65 , HMS21N65A , HMS21N65F , HMS21N70 , HMS21N70A , HMS21N70F , HMS25N65 , HMS25N65D , IRFB31N20D , HMS28N65 , HMS28N65D , HMS28N65F , HMS28N65T , HMS29N65 , HMS29N65D , HMS29N65F , HMS3205 .

History: VBZA4410 | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E

Keywords - HMS25N65F MOSFET datasheet

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