HMS25N65F Datasheet. Specs and Replacement

Type Designator: HMS25N65F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO220F

HMS25N65F substitution

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HMS25N65F datasheet

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HMS25N65F

HMS25N65/HMS25N65D/HMS25N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 115 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind... See More ⇒

Detailed specifications: HMS21N65, HMS21N65A, HMS21N65F, HMS21N70, HMS21N70A, HMS21N70F, HMS25N65, HMS25N65D, IRF2807, HMS28N65, HMS28N65D, HMS28N65F, HMS28N65T, HMS29N65, HMS29N65D, HMS29N65F, HMS3205

Keywords - HMS25N65F MOSFET specs

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