HMS29N65D Datasheet. Specs and Replacement

Type Designator: HMS29N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO263

HMS29N65D substitution

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HMS29N65D datasheet

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HMS29N65D

HMS29N65/HMS29N65D/HMS29N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 96 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu... See More ⇒

Detailed specifications: HMS25N65, HMS25N65D, HMS25N65F, HMS28N65, HMS28N65D, HMS28N65F, HMS28N65T, HMS29N65, 75N75, HMS29N65F, HMS3205, HMS3205D, HMS35DN10DA, HMS35N10K, HMS38N60T, HMS4030, HMS4030D

Keywords - HMS29N65D MOSFET specs

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