HMS35N10K Datasheet. Specs and Replacement
Type Designator: HMS35N10K 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 354 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO252
HMS35N10K substitution
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HMS35N10K datasheet
hms35n10k.pdf
HMS35N10K N-Channel Super Trench Power MOSFET Description The HMS35N10K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific... See More ⇒
hms35dn10da.pdf
HMS35DN10DA N-Channel Super Trench Power MOSFET Description General Features The HMS35DN10DA uses Super Trench technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high RDS(ON)=18m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=22m (typical) @ VGS=4.5V switching power losses are minimized due to an extremely... See More ⇒
Detailed specifications: HMS28N65F, HMS28N65T, HMS29N65, HMS29N65D, HMS29N65F, HMS3205, HMS3205D, HMS35DN10DA, 7N60, HMS38N60T, HMS4030, HMS4030D, HMS40N10D, HMS4110T, HMS4260, HMS4264, HMS4290
Keywords - HMS35N10K MOSFET specs
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