All MOSFET. HMS35N10K Datasheet

 

HMS35N10K Datasheet and Replacement


   Type Designator: HMS35N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 354 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO252
 

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HMS35N10K Datasheet (PDF)

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HMS35N10K

HMS35N10KN-Channel Super Trench Power MOSFET Description The HMS35N10K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

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HMS35N10K

HMS35DN10DAN-Channel Super Trench Power MOSFET Description General Features The HMS35DN10DA uses Super Trench technology that is VDS =100V,ID =35A uniquely optimized to provide the most efficient high RDS(ON)=18m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=22m (typical) @ VGS=4.5V switching power losses are minimized due to an extremely

Datasheet: HMS28N65F , HMS28N65T , HMS29N65 , HMS29N65D , HMS29N65F , HMS3205 , HMS3205D , HMS35DN10DA , MMIS60R580P , HMS38N60T , HMS4030 , HMS4030D , HMS40N10D , HMS4110T , HMS4260 , HMS4264 , HMS4290 .

History: SI4622DY | VBZL80N03

Keywords - HMS35N10K MOSFET datasheet

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