HMS38N60T Datasheet and Replacement
Type Designator: HMS38N60T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 322 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 97 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
HMS38N60T substitution
HMS38N60T Datasheet (PDF)
hms38n60t.pdf

HMS38N60TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 600 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic
Datasheet: HMS28N65T , HMS29N65 , HMS29N65D , HMS29N65F , HMS3205 , HMS3205D , HMS35DN10DA , HMS35N10K , RU7088R , HMS4030 , HMS4030D , HMS40N10D , HMS4110T , HMS4260 , HMS4264 , HMS4290 , HMS4294 .
History: QM3201S | LD1014D | 2SK1581 | DMG4932LSD | NCE30NP1812K | 2SK2058 | AP4503GM
Keywords - HMS38N60T MOSFET datasheet
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History: QM3201S | LD1014D | 2SK1581 | DMG4932LSD | NCE30NP1812K | 2SK2058 | AP4503GM



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