HMS38N60T MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS38N60T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 322 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 38 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 97 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
HMS38N60T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS38N60T Datasheet (PDF)
..1. Size:595K cn hmsemi
hms38n60t.pdf
hms38n60t.pdf
HMS38N60TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 600 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic
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