HMS38N60T Datasheet. Specs and Replacement
Type Designator: HMS38N60T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 322 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 38 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 97 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO247
HMS38N60T substitution
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HMS38N60T datasheet
hms38n60t.pdf
HMS38N60T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 600 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic... See More ⇒
Detailed specifications: HMS28N65T, HMS29N65, HMS29N65D, HMS29N65F, HMS3205, HMS3205D, HMS35DN10DA, HMS35N10K, IRFZ48N, HMS4030, HMS4030D, HMS40N10D, HMS4110T, HMS4260, HMS4264, HMS4290, HMS4294
Keywords - HMS38N60T MOSFET specs
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