All MOSFET. HMS38N60T Datasheet

 

HMS38N60T Datasheet and Replacement


   Type Designator: HMS38N60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 322 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247
 

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HMS38N60T Datasheet (PDF)

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HMS38N60T

HMS38N60TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 600 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic

Datasheet: HMS28N65T , HMS29N65 , HMS29N65D , HMS29N65F , HMS3205 , HMS3205D , HMS35DN10DA , HMS35N10K , RU7088R , HMS4030 , HMS4030D , HMS40N10D , HMS4110T , HMS4260 , HMS4264 , HMS4290 , HMS4294 .

History: STD4NS25T4 | STS6P3LLH6 | AP65SL380BR | 2SJ264 | MPSP70M290 | STD50NH02LT4 | IRF6614

Keywords - HMS38N60T MOSFET datasheet

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