HMS47N60A Datasheet and Replacement
Type Designator: HMS47N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO3P
HMS47N60A substitution
HMS47N60A Datasheet (PDF)
hms47n60a.pdf

HMS47N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 70 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea
hms47n65a.pdf

HMS47N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 80 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features
Datasheet: HMS4294 , HMS4296 , HMS4296B , HMS4438 , HMS4444A , HMS4454 , HMS45N15D , HMS45N15K , BS170 , HMS47N65A , HMS4N70 , HMS4N70D , HMS4N70F , HMS4N70I , HMS4N70K , HMS50N12DA , HMS50N15LD .
Keywords - HMS47N60A MOSFET datasheet
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History: SFF420J | NCE40H10K



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