HMS47N60A Datasheet. Specs and Replacement

Type Designator: HMS47N60A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO3P

HMS47N60A substitution

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HMS47N60A datasheet

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HMS47N60A

HMS47N60A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 70 m gate charge. This super junction MOSFET fits the industry s ID A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea... See More ⇒

 7.1. Size:974K  cn hmsemi
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HMS47N60A

HMS47N65A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 80 m gate charge. This super junction MOSFET fits the industry s ID A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ... See More ⇒

Detailed specifications: HMS4294, HMS4296, HMS4296B, HMS4438, HMS4444A, HMS4454, HMS45N15D, HMS45N15K, IRF730, HMS47N65A, HMS4N70, HMS4N70D, HMS4N70F, HMS4N70I, HMS4N70K, HMS50N12DA, HMS50N15LD

Keywords - HMS47N60A MOSFET specs

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