All MOSFET. HMS47N60A Datasheet

 

HMS47N60A Datasheet and Replacement


   Type Designator: HMS47N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO3P
 

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HMS47N60A Datasheet (PDF)

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HMS47N60A

HMS47N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 70 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea

 7.1. Size:974K  cn hmsemi
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HMS47N60A

HMS47N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 80 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

Datasheet: HMS4294 , HMS4296 , HMS4296B , HMS4438 , HMS4444A , HMS4454 , HMS45N15D , HMS45N15K , BS170 , HMS47N65A , HMS4N70 , HMS4N70D , HMS4N70F , HMS4N70I , HMS4N70K , HMS50N12DA , HMS50N15LD .

History: NTHS5445T1 | APT4080BN | 25N10G-TM3-T

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