HMS50N12DA Datasheet. Specs and Replacement
Type Designator: HMS50N12DA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 273 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: DFN5X6-8L
HMS50N12DA substitution
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HMS50N12DA datasheet
hms50n12da.pdf
N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =120V,ID =50A frequency switching performance. Both conduction and RDS(ON)=10m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS(ON)=12m (typical) @ VG... See More ⇒
hms50n15ld.pdf
HMS50N15LD N-Channel Super Trench Power MOSFET Description The HMS50N15LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti... See More ⇒
Detailed specifications: HMS45N15K, HMS47N60A, HMS47N65A, HMS4N70, HMS4N70D, HMS4N70F, HMS4N70I, HMS4N70K, IRF540, HMS50N15LD, HMS5N90I, HMS5N90K, HMS60N04EQ, HMS60N06D, HMS60N10D, HMS65N03Q, HMS75N65T
Keywords - HMS50N12DA MOSFET specs
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