HMS5N90I Datasheet. Specs and Replacement

Type Designator: HMS5N90I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

HMS5N90I substitution

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HMS5N90I datasheet

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HMS5N90I

HMS5N90I/HMS5N90K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 900 V DS junction technology and design to provide excellent RDS(ON) R 1.5 DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 5 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒

Detailed specifications: HMS47N65A, HMS4N70, HMS4N70D, HMS4N70F, HMS4N70I, HMS4N70K, HMS50N12DA, HMS50N15LD, IRFP460, HMS5N90K, HMS60N04EQ, HMS60N06D, HMS60N10D, HMS65N03Q, HMS75N65T, HMS7N65I, HMS7N65K

Keywords - HMS5N90I MOSFET specs

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