All MOSFET. HMS5N90I Datasheet

 

HMS5N90I Datasheet and Replacement


   Type Designator: HMS5N90I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO251
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HMS5N90I Datasheet (PDF)

 ..1. Size:970K  cn hmsemi
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HMS5N90I

HMS5N90I/HMS5N90K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 900 V DSjunction technology and design to provide excellent RDS(ON) R 1.5 DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 5 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SE3080K | HM12N60 | NTR1P02LT1G | APT10021JFLL | FCPF380N60_F152 | AM4935P

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