HMS65N03Q Specs and Replacement
Type Designator: HMS65N03Q
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 773 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: DFN3.3X3.3-8L
HMS65N03Q substitution
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HMS65N03Q datasheet
hms65n03q.pdf
HMS65N03Q N-Channel Super Trench Power MOSFET Description The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific... See More ⇒
Detailed specifications: HMS4N70K , HMS50N12DA , HMS50N15LD , HMS5N90I , HMS5N90K , HMS60N04EQ , HMS60N06D , HMS60N10D , IRFB4110 , HMS75N65T , HMS7N65I , HMS7N65K , HMS7N70I , HMS7N70K , HMS80N06D , HMS80N10 , HMS80N10AL .
Keywords - HMS65N03Q MOSFET specs
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HMS65N03Q replacement
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