All MOSFET. HMS65N03Q Datasheet

 

HMS65N03Q Datasheet and Replacement


   Type Designator: HMS65N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: DFN3.3X3.3-8L
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HMS65N03Q Datasheet (PDF)

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HMS65N03Q

HMS65N03QN-Channel Super Trench Power MOSFET Description The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

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History: APT50M65LLLG | IRF820A | SM4021NAKP | AP73T02GH-HF | KTJ6164S | SWYS069R10VS | SI4670DY

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