HMS65N03Q MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS65N03Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 34.8 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 773 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: DFN3.3X3.3-8L
HMS65N03Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS65N03Q Datasheet (PDF)
hms65n03q.pdf
HMS65N03QN-Channel Super Trench Power MOSFET Description The HMS65N03Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
