All MOSFET. HMS75N65T Datasheet

 

HMS75N65T Datasheet and Replacement


   Type Designator: HMS75N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 510 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 252 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: TO247
 

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HMS75N65T Datasheet (PDF)

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HMS75N65T

HMS75N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Datasheet: HMS50N12DA , HMS50N15LD , HMS5N90I , HMS5N90K , HMS60N04EQ , HMS60N06D , HMS60N10D , HMS65N03Q , IRF630 , HMS7N65I , HMS7N65K , HMS7N70I , HMS7N70K , HMS80N06D , HMS80N10 , HMS80N10AL , HMS80N10D .

History: ME70N03S-G | P5506HVA | AP3A010MT | DMG1023UV | ME2N7002D | CHM4559JGP | FQNL1N50BTA

Keywords - HMS75N65T MOSFET datasheet

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