HMS75N65T MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS75N65T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 510 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 116 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 252 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO247
HMS75N65T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS75N65T Datasheet (PDF)
..1. Size:486K cn hmsemi
hms75n65t.pdf
hms75n65t.pdf
HMS75N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
