HMS75N65T PDF and Equivalents Search

 

HMS75N65T Specs and Replacement

Type Designator: HMS75N65T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 510 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 252 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO247

HMS75N65T substitution

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HMS75N65T datasheet

 ..1. Size:486K  cn hmsemi
 hms75n65t.pdf pdf_icon

HMS75N65T

HMS75N65T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DS technology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP. gate charge. This super junction MOSFET fits the industry s ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. ... See More ⇒

Detailed specifications: HMS50N12DA , HMS50N15LD , HMS5N90I , HMS5N90K , HMS60N04EQ , HMS60N06D , HMS60N10D , HMS65N03Q , IRF640N , HMS7N65I , HMS7N65K , HMS7N70I , HMS7N70K , HMS80N06D , HMS80N10 , HMS80N10AL , HMS80N10D .

Keywords - HMS75N65T MOSFET specs

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