All MOSFET. HMS7N65I Datasheet

 

HMS7N65I Datasheet and Replacement


   Type Designator: HMS7N65I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO251
 

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HMS7N65I Datasheet (PDF)

 ..1. Size:485K  cn hmsemi
 hms7n65i hms7n65k.pdf pdf_icon

HMS7N65I

N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe

 9.1. Size:513K  cn hmsemi
 hms7n70i hms7n70k.pdf pdf_icon

HMS7N65I

N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 7 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe

Datasheet: HMS50N15LD , HMS5N90I , HMS5N90K , HMS60N04EQ , HMS60N06D , HMS60N10D , HMS65N03Q , HMS75N65T , 10N60 , HMS7N65K , HMS7N70I , HMS7N70K , HMS80N06D , HMS80N10 , HMS80N10AL , HMS80N10D , HMS80N10KA .

History: ME80N08AH-G | NDP6060L

Keywords - HMS7N65I MOSFET datasheet

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