HMS7N65I Datasheet. Specs and Replacement

Type Designator: HMS7N65I  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm

Package: TO251

HMS7N65I substitution

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HMS7N65I datasheet

 ..1. Size:485K  cn hmsemi
 hms7n65i hms7n65k.pdf pdf_icon

HMS7N65I

N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 600 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒

 9.1. Size:513K  cn hmsemi
 hms7n70i hms7n70k.pdf pdf_icon

HMS7N65I

N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 7 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒

Detailed specifications: HMS50N15LD, HMS5N90I, HMS5N90K, HMS60N04EQ, HMS60N06D, HMS60N10D, HMS65N03Q, HMS75N65T, IRFP260N, HMS7N65K, HMS7N70I, HMS7N70K, HMS80N06D, HMS80N10, HMS80N10AL, HMS80N10D, HMS80N10KA

Keywords - HMS7N65I MOSFET specs

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