FNK6075K Datasheet and Replacement
Type Designator: FNK6075K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
Package: TO252
FNK6075K substitution
FNK6075K Datasheet (PDF)
fnk6075k.pdf

FNK6075KFNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =60V,ID =75A RDS(ON)
Datasheet: HMS8N70 , HMS8N70D , HMS8N70F , HMS8N70I , HMS8N70K , HMS90N04D , AO3413L , CSD30N70 , IRLZ44N , KMK1265F , ZM075N03D , YSP040N010T1A , YSK038N010T1A , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE .
History: SI2305CDS-T1-GE3 | SI2323DDS-T1-GE3 | UTT150N03 | XGP6510B | YJS4409A | APT10035B2LL | STD30NF03L
Keywords - FNK6075K MOSFET datasheet
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History: SI2305CDS-T1-GE3 | SI2323DDS-T1-GE3 | UTT150N03 | XGP6510B | YJS4409A | APT10035B2LL | STD30NF03L



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