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YSP040N010T1A Spec and Replacement


   Type Designator: YSP040N010T1A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 236 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 1080 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220

 YSP040N010T1A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YSP040N010T1A Specs

 ..1. Size:476K  cn luxin semi
 ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf pdf_icon

YSP040N010T1A

YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on) I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R ... See More ⇒

Detailed specifications: HMS8N70I , HMS8N70K , HMS90N04D , AO3413L , CSD30N70 , FNK6075K , KMK1265F , ZM075N03D , NCEP15T14 , YSK038N010T1A , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX .

History: NTP6412ANG | DMN1033UCB4

Keywords - YSP040N010T1A MOSFET specs

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