YSP040N010T1A Datasheet. Specs and Replacement
Type Designator: YSP040N010T1A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 236 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 1080 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO220
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YSP040N010T1A substitution
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YSP040N010T1A datasheet
ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf
YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on) I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R ... See More ⇒
Detailed specifications: HMS8N70I, HMS8N70K, HMS90N04D, AO3413L, CSD30N70, FNK6075K, KMK1265F, ZM075N03D, CS150N03A8, YSK038N010T1A, YSF040N010T1A, 2SK741, DTM4415, GWM13S65YRE, GWM13S65YRD, GWM13S65YRY, GWM13S65YRX
Keywords - YSP040N010T1A MOSFET specs
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History: NTHL160N120SC1 | AP01P10I | NTHL020N120SC1 | STF28N60M2 | FDMS8880 | JMTG016N04A | NTHL190N65S3HF
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