All MOSFET. YSP040N010T1A Datasheet

 

YSP040N010T1A MOSFET. Datasheet pdf. Equivalent


   Type Designator: YSP040N010T1A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 236 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 67 nC
   trⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 1080 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO220

 YSP040N010T1A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

YSP040N010T1A Datasheet (PDF)

 ..1. Size:476K  cn luxin semi
 ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf

YSP040N010T1A YSP040N010T1A

YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on)I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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