YSP040N010T1A MOSFET. Datasheet pdf. Equivalent
Type Designator: YSP040N010T1A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 236 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 67 nC
Rise Time (tr): 84 nS
Drain-Source Capacitance (Cd): 1080 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO220
YSP040N010T1A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YSP040N010T1A Datasheet (PDF)
ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf

YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on)I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .



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