YSK038N010T1A Specs and Replacement
Type Designator: YSK038N010T1A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 236 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 1080 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
YSK038N010T1A substitution
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YSK038N010T1A datasheet
ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf
YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on) I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R ... See More ⇒
Detailed specifications: HMS8N70K , HMS90N04D , AO3413L , CSD30N70 , FNK6075K , KMK1265F , ZM075N03D , YSP040N010T1A , AON7506 , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 .
Keywords - YSK038N010T1A MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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