YSK038N010T1A Datasheet and Replacement
Type Designator: YSK038N010T1A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 236 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 1080 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
YSK038N010T1A substitution
YSK038N010T1A Datasheet (PDF)
ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf

YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on)I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R
Datasheet: HMS8N70K , HMS90N04D , AO3413L , CSD30N70 , FNK6075K , KMK1265F , ZM075N03D , YSP040N010T1A , 2N7002 , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 .
Keywords - YSK038N010T1A MOSFET datasheet
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