All MOSFET. YSK038N010T1A Datasheet

 

YSK038N010T1A Datasheet and Replacement


   Type Designator: YSK038N010T1A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 236 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 1080 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
 

 YSK038N010T1A substitution

   - MOSFET ⓘ Cross-Reference Search

 

YSK038N010T1A Datasheet (PDF)

 ..1. Size:476K  cn luxin semi
ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf pdf_icon

YSK038N010T1A

YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on)I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R

Datasheet: HMS8N70K , HMS90N04D , AO3413L , CSD30N70 , FNK6075K , KMK1265F , ZM075N03D , YSP040N010T1A , IRFP250 , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 .

History: IPP70N12S3-11 | G2002L

Keywords - YSK038N010T1A MOSFET datasheet

 YSK038N010T1A cross reference
 YSK038N010T1A equivalent finder
 YSK038N010T1A lookup
 YSK038N010T1A substitution
 YSK038N010T1A replacement

 

 
Back to Top

 


 
.