YSK038N010T1A MOSFET. Datasheet pdf. Equivalent

Type Designator: YSK038N010T1A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 236 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 120 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 67 nC

Rise Time (tr): 84 nS

Drain-Source Capacitance (Cd): 1080 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO263

YSK038N010T1A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BUY TRANSISTORS

 

YSK038N010T1A Datasheet (PDF)

 ..1. Size:476K  cn luxin semi
 ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf

YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on)I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF630 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .