YSK038N010T1A PDF and Equivalents Search

 

YSK038N010T1A Specs and Replacement

Type Designator: YSK038N010T1A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 236 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 1080 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

YSK038N010T1A substitution

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YSK038N010T1A datasheet

 ..1. Size:476K  cn luxin semi
ysp040n010t1a ysk038n010t1a ysf040n010t1a.pdf pdf_icon

YSK038N010T1A

YSP040N010T1A YSK038N010T1A YSF040N010T1A 100V N-Channel Power MOSFET Features N-channel Power MOSFET V 100 V DS Extremely low on-resistance R DS(on) I 120 A D Excellent Q x R product(FOM) g DS(on) Qualified according to JEDEC criteria m R ... See More ⇒

Detailed specifications: HMS8N70K , HMS90N04D , AO3413L , CSD30N70 , FNK6075K , KMK1265F , ZM075N03D , YSP040N010T1A , AON7506 , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 .

Keywords - YSK038N010T1A MOSFET specs

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