GWM13S65YRD Datasheet. Specs and Replacement

Type Designator: GWM13S65YRD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 81 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO252

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GWM13S65YRD datasheet

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GWM13S65YRD

GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin... See More ⇒

Detailed specifications: KMK1265F, ZM075N03D, YSP040N010T1A, YSK038N010T1A, YSF040N010T1A, 2SK741, DTM4415, GWM13S65YRE, CS150N04A8, GWM13S65YRY, GWM13S65YRX, RX80N07, SVG104R5NT, SVG104R5NS, VS1401ATH, HCCW120R080H1, HCCZ120R080H1

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