GWM13S65YRY Specs and Replacement
Type Designator: GWM13S65YRY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO220
GWM13S65YRY substitution
GWM13S65YRY datasheet
gwm13s65y.pdf
GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin... See More ⇒
Detailed specifications: ZM075N03D , YSP040N010T1A , YSK038N010T1A , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , 4N60 , GWM13S65YRX , RX80N07 , SVG104R5NT , SVG104R5NS , VS1401ATH , HCCW120R080H1 , HCCZ120R080H1 , VS3620DE-G .
Keywords - GWM13S65YRY MOSFET specs
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GWM13S65YRY replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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