GWM13S65YRY PDF and Equivalents Search

 

GWM13S65YRY Specs and Replacement

Type Designator: GWM13S65YRY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 103 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 30 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO220

GWM13S65YRY substitution

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GWM13S65YRY datasheet

 5.1. Size:522K  1
 gwm13s65y.pdf pdf_icon

GWM13S65YRY

GWM13S65Y POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand SJ MOS high energy in the avalanche mode and switch efficiently. This Higher Current Rating new high energy device also offers a drain-to-source diode Lower Rds(on) with fast recovery time. Designed for high voltage, high speed Lower Capacitances switchin... See More ⇒

Detailed specifications: ZM075N03D , YSP040N010T1A , YSK038N010T1A , YSF040N010T1A , 2SK741 , DTM4415 , GWM13S65YRE , GWM13S65YRD , 4N60 , GWM13S65YRX , RX80N07 , SVG104R5NT , SVG104R5NS , VS1401ATH , HCCW120R080H1 , HCCZ120R080H1 , VS3620DE-G .

Keywords - GWM13S65YRY MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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