All MOSFET. VS1401ATH Datasheet

 

VS1401ATH Datasheet and Replacement


   Type Designator: VS1401ATH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220AB
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VS1401ATH Datasheet (PDF)

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VS1401ATH

VS1401ATH100V/130A N-Channel Advanced Power MOSFETV DS 100 VFeaturesR DS(on),TYP@ VGS=10 V 4.5 m Enhancement modeI D(Silicon Limited) 200 A Very low on-resistance RDS(on) @ VGS=10 VI D(Package Limited) 130 A 100% Avalanche testTO-220ABPart ID Package Type Marking PackingVS1401ATH TO-220AB 1401ATH 50pcs/TubeMaximum ratings, at TA =25C, unless otherwise spe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZVN4525E6TA | LKK47-06C5 | TSM4424CS | 3SK256 | BUZ81 | IRFB3004GPBF | BRCS200P03DP

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