VS1401ATH Datasheet. Specs and Replacement

Type Designator: VS1401ATH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220AB

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VS1401ATH datasheet

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VS1401ATH

VS1401ATH 100V/130A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 4.5 m Enhancement mode I D(Silicon Limited) 200 A Very low on-resistance RDS(on) @ VGS=10 V I D(Package Limited) 130 A 100% Avalanche test TO-220AB Part ID Package Type Marking Packing VS1401ATH TO-220AB 1401ATH 50pcs/Tube Maximum ratings, at TA =25 C, unless otherwise spe... See More ⇒

Detailed specifications: DTM4415, GWM13S65YRE, GWM13S65YRD, GWM13S65YRY, GWM13S65YRX, RX80N07, SVG104R5NT, SVG104R5NS, TK10A60D, HCCW120R080H1, HCCZ120R080H1, VS3620DE-G, VS3620DP-G, VS3622DP, VS3622DP2, VS3622DP3, VS3622DS

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.