All MOSFET. VS1401ATH Datasheet

 

VS1401ATH Datasheet and Replacement


   Type Designator: VS1401ATH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO220AB
 

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VS1401ATH Datasheet (PDF)

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VS1401ATH

VS1401ATH100V/130A N-Channel Advanced Power MOSFETV DS 100 VFeaturesR DS(on),TYP@ VGS=10 V 4.5 m Enhancement modeI D(Silicon Limited) 200 A Very low on-resistance RDS(on) @ VGS=10 VI D(Package Limited) 130 A 100% Avalanche testTO-220ABPart ID Package Type Marking PackingVS1401ATH TO-220AB 1401ATH 50pcs/TubeMaximum ratings, at TA =25C, unless otherwise spe

Datasheet: DTM4415 , GWM13S65YRE , GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 , SVG104R5NT , SVG104R5NS , 10N65 , HCCW120R080H1 , HCCZ120R080H1 , VS3620DE-G , VS3620DP-G , VS3622DP , VS3622DP2 , VS3622DP3 , VS3622DS .

History: IXFP4N100Q

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