HCCW120R080H1 MOSFET. Datasheet pdf. Equivalent
Type Designator: HCCW120R080H1
Marking Code: 120R080H1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 36 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 55.5 nC
trⓘ - Rise Time: 24.1 nS
Cossⓘ - Output Capacitance: 97 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO247
HCCW120R080H1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HCCW120R080H1 Datasheet (PDF)
hccw120r080h1.pdf
HCCW120R080H11200V/80m N-Channel SIC Power MOSFETFeaturesV 1200 VDS High speed switching with low on-resistanceR 80 mDS(on),TYP@25 Very low switching lossesI 36 AD Controllable dv/dt Avalanche Ruggedness and 100% Avalanche test TO-247 Robust body diode123DPart ID Package Type Marking PackingHCCW120R080H1 TO-247 120R080H1 30pcs/PipeG
hccw120r040h1.pdf
HCCW120R040H11200V/55A N-Channel Advanced Power MOSFETV DS 1200 VFeaturesR DS(on),TYP@ VGS=20 V 42 m SiC MOSFET technologyI D(Silicon limited) 55 A High blocking voltage with low on-resistance High-speed switching with low capacitancesTO-247 Very low switching losses Low reverse recovery (Qrr) 100% Avalanche tested,100% Rg testedPart ID Package Typ
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
