HCCZ120R080H1 Datasheet. Specs and Replacement

Type Designator: HCCZ120R080H1  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 288 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.1 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO247-4

HCCZ120R080H1 substitution

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HCCZ120R080H1 datasheet

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HCCZ120R080H1

HCCZ120R080H1 1200V/80m N-Channel SIC Power MOSFET Features V 1200 V DS High speed switching with low on-resistance R 80 m DS(on),TYP@25 Very low switching losses I 36 A D Controllable dv/dt Avalanche Ruggedness and 100% Avalanche test TO-247-4L Robust body diode 1 2 3 4 Part ID Package Type Marking Packing HCCZ120R080H1 TO-247-4L 120R080H1 30pcs/P... See More ⇒

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 hccz120r040h1.pdf pdf_icon

HCCZ120R080H1

HCCZ120R040H1 1200V/55A N-Channel Advanced Power MOSFET V DS 1200 V Features R DS(on),TYP@ VGS=20 V 42 m SiC MOSFET technology I D(Silicon limited) 55 A High blocking voltage with low on-resistance High-speed switching with low capacitances TO-247-4L Very low switching losses Low reverse recovery (Qrr) 100% Avalanche tested,100% Rg tested Part ID Package ... See More ⇒

Detailed specifications: GWM13S65YRD, GWM13S65YRY, GWM13S65YRX, RX80N07, SVG104R5NT, SVG104R5NS, VS1401ATH, HCCW120R080H1, SI2302, VS3620DE-G, VS3620DP-G, VS3622DP, VS3622DP2, VS3622DP3, VS3622DS, VS3628DE-G, VS3638DE-G

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