All MOSFET. HCCZ120R080H1 Datasheet

 

HCCZ120R080H1 Datasheet and Replacement


   Type Designator: HCCZ120R080H1
   Marking Code: 120R080H1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 288 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 55.5 nC
   tr ⓘ - Rise Time: 24.1 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO247-4
 

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HCCZ120R080H1 Datasheet (PDF)

 ..1. Size:1127K  cn vgsemi
 hccz120r080h1.pdf pdf_icon

HCCZ120R080H1

HCCZ120R080H11200V/80m N-Channel SIC Power MOSFETFeaturesV 1200 VDS High speed switching with low on-resistanceR 80 mDS(on),TYP@25 Very low switching lossesI 36 AD Controllable dv/dt Avalanche Ruggedness and 100% Avalanche test TO-247-4L Robust body diode1234Part ID Package Type Marking PackingHCCZ120R080H1 TO-247-4L 120R080H1 30pcs/P

 5.1. Size:3498K  cn vgsemi
 hccz120r040h1.pdf pdf_icon

HCCZ120R080H1

HCCZ120R040H11200V/55A N-Channel Advanced Power MOSFETV DS 1200 VFeaturesR DS(on),TYP@ VGS=20 V 42 m SiC MOSFET technologyI D(Silicon limited) 55 A High blocking voltage with low on-resistance High-speed switching with low capacitancesTO-247-4L Very low switching losses Low reverse recovery (Qrr) 100% Avalanche tested,100% Rg testedPart ID Package

Datasheet: GWM13S65YRD , GWM13S65YRY , GWM13S65YRX , RX80N07 , SVG104R5NT , SVG104R5NS , VS1401ATH , HCCW120R080H1 , IRFZ46N , VS3620DE-G , VS3620DP-G , VS3622DP , VS3622DP2 , VS3622DP3 , VS3622DS , VS3628DE-G , VS3638DE-G .

History: 2SJ605-ZJ | 2SK2009 | 2SK2055 | CEB02N7G | NTMFS5C645NL | KI4532ADY | RUH40190M

Keywords - HCCZ120R080H1 MOSFET datasheet

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