VS4620DP-G MOSFET. Datasheet pdf. Equivalent
Type Designator: VS4620DP-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 48 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
Package: PDFN5X6
VS4620DP-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS4620DP-G Datasheet (PDF)
vs4620dp-g.pdf
VS4620DP-G40V/36A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 7 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 10 m Enhancement modeI D(Silicon Limited) 48 A VitoMOS TechnologyI D(Package Limited) 36 A Fast Switching and High efficiencyPDFN5x6 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Packi
vs4620de-g.pdf
VS4620DE-G40V/14A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 9 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 12 m Enhancement modeI D(Silicon Limited) 47 A VitoMOS TechnologyI D(Package Limited) 14 A 100% Avalanche Tested,100% Rg TestedPDFN3333 Dual Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPa
vs4620ds-g.pdf
VS4620DS-G40V/11A Dual N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 8.1 m Enhancement modeR DS(on),TYP@ VGS=4.5V 11 m VitoMOS TechnologyI D 11 A 100% Avalanche Tested,100% Rg TestedSOP8 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS4620DS-G SOP8 4620DS 3000pcs/Reel
vs4620gd.pdf
VS4620GD40V/29A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 7.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m VitoMOS TechnologI D(Wire bond Limited) 29 A 100% Avalanche Tested,100% Rg tested Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesTO-252Part ID Package Type Marking PackingVS4620GD TO-252 4620
vs4620gs.pdf
VS4620GS40V/11A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 7.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 10 m VitoMOS TechnologyI D(Silicon Limited) 11 A Fast Switching and High efficiencySOP8 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4620GS SOP8 4620GS 3000pcs/ReelMaximum ratings, at T
vs4620gi.pdf
VS4620GI40V/29A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 7.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m VitoMOS TechnologI D(Wire bond Limited) 29 A 100% Avalanche Tested,100% Rg testedTO-251 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Marking PackingVS4620GI TO-251 4620
vs4620gp.pdf
VS4620GP40V/40A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 6.5 m Enhancement modeR DS(on),TYP@ VGS=4.5V 10 m VitoMOS TechnologyI D(Silicon Limited) 40 A 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVS4620GP PDFN5x6 4620GP 3000pcs/ReelMaximum ratings, at T A=25 C, unless otherwise specif
vs4620gemc.pdf
VS4620GEMC40V/36A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 10 m VitoMOS TechnologyI D(Silicon Limited) 54 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS4620GEMC PDFN3333 4620GE 5000PCS/Ree
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
