All MOSFET. VSA007N02KD Datasheet

 

VSA007N02KD Datasheet and Replacement


   Type Designator: VSA007N02KD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TDFN2X3-6L
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VSA007N02KD Datasheet (PDF)

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VSA007N02KD

VSA007N02KD20V/13A Common-Drain Dual N-Channel Advanced Power MOSFETV DS 20 VFeaturesR DS(on),TYP@ VGS=4.5V 7.4 m Dual N-Channel2.5V Logic Level ControlR DS(on),TYP@ VGS=2.5V 9.4 m Enhancement modeI D 13 A Low on-resistance RDS(on) @ VGS=2.5V 100% Avalanche TestedTDFN2x3-6L Pb-free lead plating; RoHS compliantPart ID Package Type Marking Packing

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History: FQD4N25TM | 2SK3192

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