VSA007N02KD Specs and Replacement
Type Designator: VSA007N02KD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.6 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TDFN2X3-6L
VSA007N02KD substitution
- MOSFET ⓘ Cross-Reference Search
VSA007N02KD datasheet
vsa007n02kd.pdf
VSA007N02KD 20V/13A Common-Drain Dual N-Channel Advanced Power MOSFET V DS 20 V Features R DS(on),TYP@ VGS=4.5V 7.4 m Dual N-Channel 2.5V Logic Level Control R DS(on),TYP@ VGS=2.5V 9.4 m Enhancement mode I D 13 A Low on-resistance RDS(on) @ VGS=2.5V 100% Avalanche Tested TDFN2x3-6L Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing... See More ⇒
Detailed specifications: VS3640DE, VS3640DP, VS3640DP3, VS3645DE-G, VS4620DE-G, VS4620DP-G, VS4620DS-G, VS4640DE, IRFZ46N, SD2933W, FDD6030BL, FDD603AL, FDD6644, FDU6644, FDD6670S, FDD6676, FDD6676S
Keywords - VSA007N02KD MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFB4610 | IRFL4315PBF | WMM07N80M3 | TPCP8303
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