FDH20N40 Datasheet and Replacement
Type Designator: FDH20N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 32.5 nS
Cossⓘ - Output Capacitance: 245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.216 Ohm
Package: TO247
FDH20N40 substitution
FDH20N40 Datasheet (PDF)
fdh20n40 fdp20n40.pdf

October 2002FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON) Flyb
fdh20n40.pdf

isc N-Channel MOSFET Transistor FDH20N40FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.216(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: FDD6644 , FDU6644 , FDD6670S , FDD6676 , FDD6676S , FDD6680S , FDD6692 , FDU6692 , AO4468 , FDP20N40 , FDH34N40 , FMV60N280S2HF , IRF3305B , ISW65R041CFD , MDI5N40RH , MDP06N033TH , MDP06N090TH .
History: NVMTS0D6N04C
Keywords - FDH20N40 MOSFET datasheet
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History: NVMTS0D6N04C



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