FDH20N40 Specs and Replacement
Type Designator: FDH20N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32.5 nS
Cossⓘ - Output Capacitance: 245 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.216 Ohm
Package: TO247
FDH20N40 substitution
- MOSFET ⓘ Cross-Reference Search
FDH20N40 datasheet
fdh20n40 fdp20n40.pdf
October 2002 FDH20N40 / FDP20N40 20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON) Flyb... See More ⇒
fdh20n40.pdf
isc N-Channel MOSFET Transistor FDH20N40 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.216 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: FDD6644, FDU6644, FDD6670S, FDD6676, FDD6676S, FDD6680S, FDD6692, FDU6692, 60N06, FDP20N40, FDH34N40, FMV60N280S2HF, IRF3305B, ISW65R041CFD, MDI5N40RH, MDP06N033TH, MDP06N090TH
Keywords - FDH20N40 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: APM9430
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