All MOSFET. FMV60N280S2HF Datasheet

 

FMV60N280S2HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: FMV60N280S2HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 290 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F

 FMV60N280S2HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FMV60N280S2HF Datasheet (PDF)

 ..1. Size:279K  inchange semiconductor
 fmv60n280s2hf.pdf

FMV60N280S2HF FMV60N280S2HF

isc N-Channel MOSFET Transistor FMV60N280S2HFFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

 8.1. Size:252K  inchange semiconductor
 fmv60n190s2hf.pdf

FMV60N280S2HF FMV60N280S2HF

isc N-Channel MOSFET Transistor FMV60N190S2HFFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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