All MOSFET. MME65R280QRH Datasheet

 

MME65R280QRH Datasheet and Replacement


   Type Designator: MME65R280QRH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1192 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO263
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MME65R280QRH Datasheet (PDF)

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MME65R280QRH

MME65R280Q Datasheet MME65R280Q 650V 0.28 N-channel MOSFET Description MME65R280Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l

 ..2. Size:289K  inchange semiconductor
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MME65R280QRH

isc N-Channel MOSFET Transistor MME65R280QRHFEATURESDrain Current : I = 13.8A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXZ210N50L | AP30H80Q | R6006JND3 | 1N70Z | STD26P3LLH6 | BUZ37 | ME6968ED-G

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