MME65R280QRH MOSFET. Datasheet pdf. Equivalent
Type Designator: MME65R280QRH
Marking Code: 65R280Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27.8 nC
Rise Time (tr): 59 nS
Drain-Source Capacitance (Cd): 1192 pF
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: TO263
MME65R280QRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MME65R280QRH Datasheet (PDF)
mme65r280qrh.pdf
MME65R280Q Datasheet MME65R280Q 650V 0.28 N-channel MOSFET Description MME65R280Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
mme65r280qrh.pdf
isc N-Channel MOSFET Transistor MME65R280QRHFEATURESDrain Current : I = 13.8A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.28(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
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