JFAM7N90C Datasheet. Specs and Replacement

Type Designator: JFAM7N90C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 271 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm

Package: TO3P

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JFAM7N90C datasheet

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JFAM7N90C

JFAM7N90C 900V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s... See More ⇒

Detailed specifications: JFAM20N60E, JFAM20N65C, JFAM20N65E, JFAM24N50C, JFAM25N50E, JFAM30N50E, JFAM30N60E, JFAM50N50C, IRF530, JFFC10N65D, JFFC13N65D, JFFC20N65C, JFFC7N65E, JFFC8N65C, JFFM13N50E, JFFM13N65D, JFFM20N60C

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