All MOSFET. JFAM7N90C Datasheet

 

JFAM7N90C Datasheet and Replacement


   Type Designator: JFAM7N90C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 271 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.95 Ohm
   Package: TO3P
 

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JFAM7N90C Datasheet (PDF)

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JFAM7N90C

JFAM7N90C 900V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

Datasheet: JFAM20N60E , JFAM20N65C , JFAM20N65E , JFAM24N50C , JFAM25N50E , JFAM30N50E , JFAM30N60E , JFAM50N50C , AO4407 , JFFC10N65D , JFFC13N65D , JFFC20N65C , JFFC7N65E , JFFC8N65C , JFFM13N50E , JFFM13N65D , JFFM20N60C .

History: WMO13N50C4 | JBE084M

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