All MOSFET. JFFM3N120E Datasheet

 

JFFM3N120E Datasheet and Replacement


   Type Designator: JFFM3N120E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO220F
 

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JFFM3N120E Datasheet (PDF)

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JFFM3N120E

JFFM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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JFFM3N120E

JFFM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

Datasheet: JFFC10N65D , JFFC13N65D , JFFC20N65C , JFFC7N65E , JFFC8N65C , JFFM13N50E , JFFM13N65D , JFFM20N60C , 10N65 , JFFM3N150C , JFFM7N90C , JFHM20N60C , JFHM20N60E , JFHM30N50P , JFHM50N50C , JFHM9N150E , JFPC10N60C .

History: NCE2323 | SFG10R10BF

Keywords - JFFM3N120E MOSFET datasheet

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