JFHM50N50C MOSFET. Datasheet pdf. Equivalent
Type Designator: JFHM50N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 140 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 730 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO247
JFHM50N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JFHM50N50C Datasheet (PDF)
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jfhm50n50c.pdf
jfhm50n50c.pdf
JFHM50N50C Silicon N-Channel Power MOSFET VDSS(TC=150) 500 V ID 50 A Features PD(TC=25) 250 W Fast Switching RDS(ON) 0.082 ESD Improved Capability Low Gate Charge (Typical Data: 140nC) Low Reverse transfer capacitances(Typical: 80pF) 100% Single Pulse avalanche energy Test Applications: Power switch circuit of PC POWER Absolute
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