All MOSFET. JFHM9N150E Datasheet

 

JFHM9N150E MOSFET. Datasheet pdf. Equivalent


   Type Designator: JFHM9N150E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 277 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 191 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO247

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JFHM9N150E Datasheet (PDF)

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 jfhm9n150e.pdf

JFHM9N150E JFHM9N150E

JFHM9N150E 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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