JFHM9N150E Datasheet. Specs and Replacement

Type Designator: JFHM9N150E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 277 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 191 nS

Cossⓘ - Output Capacitance: 309 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO247

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JFHM9N150E datasheet

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JFHM9N150E

JFHM9N150E 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency ... See More ⇒

Detailed specifications: JFFM20N60C, JFFM3N120E, JFFM3N150C, JFFM7N90C, JFHM20N60C, JFHM20N60E, JFHM30N50P, JFHM50N50C, SI2302, JFPC10N60C, JFFM10N60C, JFPC10N60CI, JFPC10N65C, JFFC10N65C, JFPC10N65CI, JFPC10N65D, JFPC10N80C

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