All MOSFET. JFHM9N150E Datasheet

 

JFHM9N150E Datasheet and Replacement


   Type Designator: JFHM9N150E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 277 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 191 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO247
 

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JFHM9N150E Datasheet (PDF)

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JFHM9N150E

JFHM9N150E 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Datasheet: JFFM20N60C , JFFM3N120E , JFFM3N150C , JFFM7N90C , JFHM20N60C , JFHM20N60E , JFHM30N50P , JFHM50N50C , IRFZ46N , JFPC10N60C , JFFM10N60C , JFPC10N60CI , JFPC10N65C , JFFC10N65C , JFPC10N65CI , JFPC10N65D , JFPC10N80C .

History: IRF7351

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