2SK2684
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2684
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 260
nS
Cossⓘ -
Output Capacitance: 520
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
LDPAK
2SK2684
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2684
Datasheet (PDF)
..1. Size:90K renesas
2sk2684.pdf
2SK2684(L), 2SK2684(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1022-0200 (Previous: ADE-208-542) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code:
0.1. Size:104K renesas
rej03g1022 2sk2684lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:30K sanyo
2sk2682ls.pdf
Ordering number : ENN6783A2SK2682LSN-Channel Silicon MOSFET2SK2682LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed diode. 2078C Micaless package facilitating mounting.[2SK2682LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI(LS)
8.2. Size:27K sanyo
2sk2682.pdf
Ordering number : ENN67832SK2682N-Channel Silicon MOSFET2SK2682Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed diode. 2078B Micaless package facilitating mounting.[2SK2682]4.510.02.83.20.91.20.70.751 : Gate1 2 3 2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI-LSAbsolute
8.3. Size:296K fuji
2sk2688-01l-01s.pdf
2SK2688-01L,SFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeatures Outline DrawingsT-Pack(L)High speed switching T-Pack(S)Low on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeS-typeEIAJMaximum ratings and characteristicsAbso
8.4. Size:295K fuji
2sk2689-01mr.pdf
2SK2689-01MRFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unl
8.5. Size:295K fuji
2sk2687-01.pdf
2SK2687-01FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unle
Datasheet: 2SK2523-01
, 2SK2524-01MR
, 2SK2525-01
, 2SK2529
, 2SK2541
, 2SK2553
, 2SK2554
, 2SK2586
, IRFP260N
, 2SK2701
, 2SK2702
, 2SK2703
, 2SK2704
, 2SK2705
, 2SK2706
, 2SK2707
, 2SK2708
.