JFFC5N65C Datasheet. Specs and Replacement

Type Designator: JFFC5N65C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220F

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JFFC5N65C datasheet

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JFFC5N65C

JFPC5N65C JFFC5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 4.5A , 650V, RDS(on)typ. = 2.3 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance... See More ⇒

Detailed specifications: JFPC20N65C, JFPC24N50C, JFFM24N50C, JFPC2N80C, JFFM12N80C, JFPC5N60C, JFFM5N60C, JFPC5N65C, IRFZ44, JFPC5N80C, JFFM5N80C, JFPC5N90C, JFFM5N90C, JFPC7N60C, JFFM7N60C, JFPC7N65C, JFFC7N65C

Keywords - JFFC5N65C MOSFET specs

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