All MOSFET. JFFC5N65C Datasheet

 

JFFC5N65C Datasheet and Replacement


   Type Designator: JFFC5N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F
 

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JFFC5N65C Datasheet (PDF)

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JFFC5N65C

JFPC5N65C JFFC5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 4.5A , 650V, RDS(on)typ. = 2.3@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance

Datasheet: JFPC20N65C , JFPC24N50C , JFFM24N50C , JFPC2N80C , JFFM12N80C , JFPC5N60C , JFFM5N60C , JFPC5N65C , IRFZ44 , JFPC5N80C , JFFM5N80C , JFPC5N90C , JFFM5N90C , JFPC7N60C , JFFM7N60C , JFPC7N65C , JFFC7N65C .

History: R520 | HITK0204MP | FCB20N60F085 | STB9NK60ZD | VN1210N1 | SFG100N10GF | IRFHM8342

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