JFFM7N60C Datasheet. Specs and Replacement

Type Designator: JFFM7N60C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 96 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO220F

JFFM7N60C substitution

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JFFM7N60C datasheet

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JFFM7N60C

JFPC7N60C JFFM7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 7A, 600V, RDS(on)typ. = 1.2 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, a... See More ⇒

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JFFM7N60C

JFPC7N90C JFFM7N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU... See More ⇒

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JFFM7N60C

JFFM7N90C 900V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s... See More ⇒

Detailed specifications: JFFM5N60C, JFPC5N65C, JFFC5N65C, JFPC5N80C, JFFM5N80C, JFPC5N90C, JFFM5N90C, JFPC7N60C, IRFP260N, JFPC7N65C, JFFC7N65C, JFPC7N90C, JFPC8N60C, JFFM8N60C, JFPC8N65C, JFPC8N65D, JFPC8N80C

Keywords - JFFM7N60C MOSFET specs

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