All MOSFET. JFQM3N120E Datasheet

 

JFQM3N120E Datasheet and Replacement


   Type Designator: JFQM3N120E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO3PH
 

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JFQM3N120E Datasheet (PDF)

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JFQM3N120E

JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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JFQM3N120E

JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

Datasheet: JFPC8N65C , JFPC8N65D , JFPC8N80C , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C , 2N7000 , JFQM3N150C , JFUX5N50D , JFDX5N50D , JNFH20N60C , JNFH20N60E , MT06N008A , CS2698ANR , EMB09A3HP .

History: VS4802GPHT | WMS175N10HG4 | SVF4N60CAF | IPP08CNE8NG | 2N7272H4 | RFP8P08 | HGB017N10S

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