All MOSFET. JFQM3N120E Datasheet

 

JFQM3N120E MOSFET. Datasheet pdf. Equivalent

Type Designator: JFQM3N120E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17.5 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 22 pF

Maximum Drain-Source On-State Resistance (Rds): 7.5 Ohm

Package: TO3PH

JFQM3N120E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFQM3N120E Datasheet (PDF)

 ..1. Size:818K  jiaensemi
 jfqm3n120e.pdf

JFQM3N120E JFQM3N120E

JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.1. Size:1362K  jiaensemi
 jfqm3n150c.pdf

JFQM3N120E JFQM3N120E

JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRLB4132 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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