All MOSFET. JFQM3N120E Datasheet

 

JFQM3N120E MOSFET. Datasheet pdf. Equivalent


   Type Designator: JFQM3N120E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 65 W
   Maximum Drain-Source Voltage |Vds|: 1200 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
   Maximum Drain Current |Id|: 3 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 17.5 nC
   Rise Time (tr): 7 nS
   Drain-Source Capacitance (Cd): 22 pF
   Maximum Drain-Source On-State Resistance (Rds): 7.5 Ohm
   Package: TO3PH

 JFQM3N120E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JFQM3N120E Datasheet (PDF)

 ..1. Size:818K  jiaensemi
jfqm3n120e.pdf

JFQM3N120E
JFQM3N120E

JFQM3N120E 1200V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 7.1. Size:1362K  jiaensemi
jfqm3n150c.pdf

JFQM3N120E
JFQM3N120E

JFQM3N150C 1500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices can be used in various power switchi

Datasheet: JFPC8N65C , JFPC8N65D , JFPC8N80C , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C , 4N60 , JFQM3N150C , JFUX5N50D , JFDX5N50D , JNFH20N60C , JNFH20N60E , MT06N008A , CS2698ANR , EMB09A3HP .

 

 
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