All MOSFET. CS2698ANR Datasheet

 

CS2698ANR Datasheet and Replacement


   Type Designator: CS2698ANR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P
 

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CS2698ANR Datasheet (PDF)

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CS2698ANR

Silicon N-Channel Power MOSFET R CS2698 ANR General Description VDSS 500 V CS2698 ANR, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Datasheet: JFFM9N90C , JFQM3N120E , JFQM3N150C , JFUX5N50D , JFDX5N50D , JNFH20N60C , JNFH20N60E , MT06N008A , AO3400 , EMB09A3HP , PJF4NA65A , QM3090M6 , S80N18R , S80N18S , S80N18RN , S80N18RP , SRC60R017FB .

History: IXFK66N50Q2

Keywords - CS2698ANR MOSFET datasheet

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