All MOSFET. CS2698ANR Datasheet

 

CS2698ANR MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS2698ANR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3P

 CS2698ANR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS2698ANR Datasheet (PDF)

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 cs2698anr.pdf

CS2698ANR CS2698ANR

Silicon N-Channel Power MOSFET R CS2698 ANR General Description VDSS 500 V CS2698 ANR, the silicon N-channel Enhanced ID 15 A PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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