FDME410NZT Datasheet and Replacement
Type Designator: FDME410NZT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: MICROFET
FDME410NZT substitution
FDME410NZT Datasheet (PDF)
fdme410nzt.pdf
February 2010FDME410NZTN-Channel PowerTrench MOSFET 20 V, 7 A, 26 mFeatures General DescriptionThis Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 AFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 Aoptimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39
fdme430nt.pdf
October 2013FDME430NTN-Channel PowerTrench MOSFET 30 V, 6 A, 40 mFeatures General DescriptionThis single N-Channel MOSFET has been designed using Max rDS(on) = 40 m at VGS = 4.5 V, ID = 6 AFairchild Semiconductors advanced PowerTrench process to Max rDS(on) = 51 m at VGS = 2.5 V, ID = 5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 71 m
Datasheet: FDMC8882 , STP423S , FDMC8884 , STP35N10 , FDME1023PZT , FDME1024NZT , FDME1034CZT , STP15L01F , K3569 , FDME510PZT , FDML7610S , STM9930A , FDMQ8203 , STM9926 , STM9435 , FDMS0312S , STM8820 .
History: HA210N06 | HM1P15MR | 2SK2975 | NTMFS5C670NLT3G | BSF030NE2LQ | WSP08N10 | 2SK4091-ZK-E2-AY
Keywords - FDME410NZT MOSFET datasheet
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History: HA210N06 | HM1P15MR | 2SK2975 | NTMFS5C670NLT3G | BSF030NE2LQ | WSP08N10 | 2SK4091-ZK-E2-AY
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