All MOSFET. FDME410NZT Datasheet

 

FDME410NZT Datasheet and Replacement


   Type Designator: FDME410NZT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: MICROFET
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FDME410NZT Datasheet (PDF)

 ..1. Size:299K  fairchild semi
 fdme410nzt.pdf pdf_icon

FDME410NZT

February 2010FDME410NZTN-Channel PowerTrench MOSFET 20 V, 7 A, 26 mFeatures General DescriptionThis Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 AFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 Aoptimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39

 9.1. Size:238K  fairchild semi
 fdme430nt.pdf pdf_icon

FDME410NZT

October 2013FDME430NTN-Channel PowerTrench MOSFET 30 V, 6 A, 40 mFeatures General DescriptionThis single N-Channel MOSFET has been designed using Max rDS(on) = 40 m at VGS = 4.5 V, ID = 6 AFairchild Semiconductors advanced PowerTrench process to Max rDS(on) = 51 m at VGS = 2.5 V, ID = 5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 71 m

Datasheet: FDMC8882 , STP423S , FDMC8884 , STP35N10 , FDME1023PZT , FDME1024NZT , FDME1034CZT , STP15L01F , 2SK3568 , FDME510PZT , FDML7610S , STM9930A , FDMQ8203 , STM9926 , STM9435 , FDMS0312S , STM8820 .

History: IPI12CNE8NG | 2SK3611 | 2SK2083 | IXTB30N100L | WSD3042DN56 | AO4405 | ME13N10A-G

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