FDME410NZT MOSFET Datasheet: N-Ch, 20V, 7A. Full specification with pinout and replacement list

FDME410NZT Specs and Replacement

Type Designator: FDME410NZT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: MICROFET

FDME410NZT substitution

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FDME410NZT datasheet

..1. Size:299K fairchild semi
fdme410nzt.pdf pdf_icon

February 2010 FDME410NZT N-Channel PowerTrench MOSFET 20 V, 7 A, 26 m Features General Description This Single N-Channel MOSFET has been designed using Max rDS(on) = 26 m at VGS = 4.5 V, ID = 7 A Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 31 m at VGS = 2.5 V, ID = 6 A optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET Max rDS(on) = 39... See More ⇒

9.1. Size:238K fairchild semi
fdme430nt.pdf pdf_icon

October 2013 FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 m Features General Description This single N-Channel MOSFET has been designed using Max rDS(on) = 40 m at VGS = 4.5 V, ID = 6 A Fairchild Semiconductor s advanced PowerTrench process to Max rDS(on) = 51 m at VGS = 2.5 V, ID = 5 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 71 m ... See More ⇒

Detailed specifications: FDMC8882, STP423S, FDMC8884, STP35N10, FDME1023PZT, FDME1024NZT, FDME1034CZT, STP15L01F, K3569, FDME510PZT, FDML7610S, STM9930A, FDMQ8203, STM9926, STM9435, FDMS0312S, STM8820