FDME510PZT PDF and Equivalents Search

 

FDME510PZT Specs and Replacement

Type Designator: FDME510PZT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: MICROFET

FDME510PZT substitution

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FDME510PZT datasheet

 ..1. Size:305K  fairchild semi
 fdme510pzt.pdf pdf_icon

FDME510PZT

February 2010 FDME510PZT P-Channel PowerTrench MOSFET -20 V, -5 A, 37 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 37 m at VGS = -4.5 V, ID = -5 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 50 m at VGS = -2.5 V, ID = -4 A It features a MOSFET with low on-state resistan... See More ⇒

Detailed specifications: STP423S , FDMC8884 , STP35N10 , FDME1023PZT , FDME1024NZT , FDME1034CZT , STP15L01F , FDME410NZT , IRFP260 , FDML7610S , STM9930A , FDMQ8203 , STM9926 , STM9435 , FDMS0312S , STM8820 , FDMS2502SDC .

History: IRHMK57260SE

Keywords - FDME510PZT MOSFET specs

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