All MOSFET. FDME510PZT Datasheet

 

FDME510PZT Datasheet and Replacement


   Type Designator: FDME510PZT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
   Package: MICROFET
 

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FDME510PZT Datasheet (PDF)

 ..1. Size:305K  fairchild semi
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FDME510PZT

February 2010FDME510PZTP-Channel PowerTrench MOSFET -20 V, -5 A, 37 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 37 m at VGS = -4.5 V, ID = -5 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 50 m at VGS = -2.5 V, ID = -4 AIt features a MOSFET with low on-state resistan

Datasheet: STP423S , FDMC8884 , STP35N10 , FDME1023PZT , FDME1024NZT , FDME1034CZT , STP15L01F , FDME410NZT , 8205A , FDML7610S , STM9930A , FDMQ8203 , STM9926 , STM9435 , FDMS0312S , STM8820 , FDMS2502SDC .

History: FQD5N15TF | FDS4070N7

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