All MOSFET. SRH04N260L Datasheet

 

SRH04N260L Datasheet and Replacement


   Type Designator: SRH04N260L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOP-8
 

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SRH04N260L Datasheet (PDF)

 ..1. Size:424K  sanrise-tech
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SRH04N260L

Datasheet 26m, 40V, N-Channel Power MOSFET SRH04N260L General Description Symbol The Sanrise SRH04N260L uses advanced trench Drain 5,6,7,8technology. It has extremely low on resistance, low gate charge and fast switching time. This Gate 4device is ideal for high frequency switching and synchronous rectification. The SRH04N260L break down voltage is 40V Source 1,2,3and it

 9.1. Size:466K  sanrise-tech
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SRH04N260L

Datasheet 50m, 40V, P-Channel Power MOSFET SRH04P500L General Description Symbol The Sanrise SRH04P500L uses advanced trench Drain 5,6,7,8technology. It has low on resistance, low gate charge and fast switching time. This device is ideal for motor driver and BMS applications. Gate 4The SRH04P500L break down voltage is 40V and it has a high rugged avalanche characteristics

Datasheet: SRC70R380E , SRC70R670E , SRC70R900 , SRH03P098LMTR-G , SRH03P098LD33TR-G , SRH03P142LMTR-G , SRH03P142LD33TR-G , SRH03P142LDTR-G , IRFP250N , SRH04P500L , SRT03N010LD56 , SRT03N010LD56TR-GS , SRT03N011L , SRT03N016L , SRT03N020L , SRT03N023H , SRT03N023L .

History: GSM4435S | NTD6416ANT | AM7361P | KO3402 | NTMD3P03R2G | STD16N65M5 | 2SJ585LS

Keywords - SRH04N260L MOSFET datasheet

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