SRT20N090HTC Datasheet and Replacement
Type Designator: SRT20N090HTC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 265 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 52.6 nC
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO220
SRT20N090HTC substitution
SRT20N090HTC Datasheet (PDF)
srt20n090h.pdf
Datasheet9.0m, 200V, N-Channel Power MOSFET SRT20N090HGeneral Description SymbolThe Sanrise SRT20N090H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Keywords - SRT20N090HTC MOSFET datasheet
SRT20N090HTC cross reference
SRT20N090HTC equivalent finder
SRT20N090HTC lookup
SRT20N090HTC substitution
SRT20N090HTC replacement
