SRT20N090HTC PDF and Equivalents Search

 

SRT20N090HTC Specs and Replacement

Type Designator: SRT20N090HTC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 265 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

SRT20N090HTC substitution

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SRT20N090HTC datasheet

 4.1. Size:1534K  sanrise-tech
 srt20n090h.pdf pdf_icon

SRT20N090HTC

Datasheet 9.0m , 200V, N-Channel Power MOSFET SRT20N090H General Description Symbol The Sanrise SRT20N090H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒

Detailed specifications: SRT15N090HS2, SRT15N090HD56, SRT15N110HD56, SRT15N110HTC, SRT15N110L, SRT15N750LD, SRT15N750LM, SRT15N750LD56, 2N7000, SRT20N090HS2, 2SK3995, SVT077R5NT, SVT077R5ND, SVT077R5NS, WML38N60C2, WMK38N60C2, WMN38N60C2

Keywords - SRT20N090HTC MOSFET specs

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