SRT20N090HS2 Specs and Replacement

Type Designator: SRT20N090HS2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 265 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO263

SRT20N090HS2 substitution

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SRT20N090HS2 datasheet

 4.1. Size:1534K  sanrise-tech
 srt20n090h.pdf pdf_icon

SRT20N090HS2

Datasheet 9.0m , 200V, N-Channel Power MOSFET SRT20N090H General Description Symbol The Sanrise SRT20N090H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒

Detailed specifications: SRT15N090HD56, SRT15N110HD56, SRT15N110HTC, SRT15N110L, SRT15N750LD, SRT15N750LM, SRT15N750LD56, SRT20N090HTC, P55NF06, 2SK3995, SVT077R5NT, SVT077R5ND, SVT077R5NS, WML38N60C2, WMK38N60C2, WMN38N60C2, WMM38N60C2

Keywords - SRT20N090HS2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.