All MOSFET. SRT20N090HS2 Datasheet

 

SRT20N090HS2 Datasheet and Replacement


   Type Designator: SRT20N090HS2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 265 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO263
 

 SRT20N090HS2 substitution

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SRT20N090HS2 Datasheet (PDF)

 4.1. Size:1534K  sanrise-tech
 srt20n090h.pdf pdf_icon

SRT20N090HS2

Datasheet9.0m, 200V, N-Channel Power MOSFET SRT20N090HGeneral Description SymbolThe Sanrise SRT20N090H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

Datasheet: SRT15N090HD56 , SRT15N110HD56 , SRT15N110HTC , SRT15N110L , SRT15N750LD , SRT15N750LM , SRT15N750LD56 , SRT20N090HTC , IRFB4115 , 2SK3995 , SVT077R5NT , SVT077R5ND , SVT077R5NS , WML38N60C2 , WMK38N60C2 , WMN38N60C2 , WMM38N60C2 .

History: STB24NM60N | SSF7604 | SI5936DU | SI7113DN | RD06HHF1 | NCE20P85GU | SRT15N075HS2

Keywords - SRT20N090HS2 MOSFET datasheet

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