All MOSFET. SVT077R5NT Datasheet

 

SVT077R5NT Datasheet and Replacement


   Type Designator: SVT077R5NT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 296 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220
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SVT077R5NT Datasheet (PDF)

 ..1. Size:442K  1
 svt077r5nt svt077r5nd svt077r5ns.pdf pdf_icon

SVT077R5NT

SVT077R5NT/D/S 95A68V N 2SVT077R5NT/D/S N MOS 1 LVMOS 3

 9.1. Size:346K  silan
 svt078r0nt svt078r0ns svt078r0nstr.pdf pdf_icon

SVT077R5NT

SVT078R0NT/S 88A68V N 2SVT078R0NT/S N MOS LVMOS 1

 9.2. Size:1010K  umw-ic
 svt078r0nd.pdf pdf_icon

SVT077R5NT

RUMWSVT078R0ND68V N-Channel Power MosfetUMW SVT078R0NDGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 68V,ID =88ARDS(ON),6.3m(Typ) @ VGS =10VLow On-ResistanceLow gate chargeFast switchingLow reverse transfer capa

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History: NTS4409NT1G | HM12N60 | NTR1P02LT1G | AOB12N65L | AM4935P | APT4014BVFRG | APT10021JFLL

Keywords - SVT077R5NT MOSFET datasheet

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