SVT077R5NS Datasheet and Replacement
Type Designator: SVT077R5NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 98 nS
Cossⓘ - Output Capacitance: 296 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO263
SVT077R5NS substitution
SVT077R5NS Datasheet (PDF)
svt077r5nt svt077r5nd svt077r5ns.pdf

SVT077R5NT/D/S 95A68V N 2SVT077R5NT/D/S N MOS 1 LVMOS 3
svt078r0nt svt078r0ns svt078r0nstr.pdf

SVT078R0NT/S 88A68V N 2SVT078R0NT/S N MOS LVMOS 1
svt078r0nd.pdf

RUMWSVT078R0ND68V N-Channel Power MosfetUMW SVT078R0NDGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 68V,ID =88ARDS(ON),6.3m(Typ) @ VGS =10VLow On-ResistanceLow gate chargeFast switchingLow reverse transfer capa
Datasheet: SRT15N750LD , SRT15N750LM , SRT15N750LD56 , SRT20N090HTC , SRT20N090HS2 , 2SK3995 , SVT077R5NT , SVT077R5ND , IRF9540 , WML38N60C2 , WMK38N60C2 , WMN38N60C2 , WMM38N60C2 , WMJ38N60C2 , AONR32340C , HCS80R380S , HY3007P .
History: SED14N65G | TMAN11N90Z
Keywords - SVT077R5NS MOSFET datasheet
SVT077R5NS cross reference
SVT077R5NS equivalent finder
SVT077R5NS lookup
SVT077R5NS substitution
SVT077R5NS replacement
History: SED14N65G | TMAN11N90Z



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