All MOSFET. WMJ38N60C2 Datasheet

 

WMJ38N60C2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ38N60C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 277 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 71 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO247

 WMJ38N60C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ38N60C2 Datasheet (PDF)

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WMJ38N60C2 WMJ38N60C2

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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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