AONR32340C Datasheet and Replacement
Type Designator: AONR32340C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 11 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: DFN3X3EP
AONR32340C substitution
AONR32340C Datasheet (PDF)
aonr32340c.pdf

AONR32340C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
aonr32314.pdf

AONR3231430V N-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V)
aonr32318.pdf

AONR3231830V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V)
aonr32320c.pdf

AONR32320C30V N-Channel MOSFETGeneral Description Product SummaryVDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: SVT077R5NT , SVT077R5ND , SVT077R5NS , WML38N60C2 , WMK38N60C2 , WMN38N60C2 , WMM38N60C2 , WMJ38N60C2 , IRF1010E , HCS80R380S , HY3007P , HY3007M , HY3007B , HY3007PS , HY3007PM , NCE80H11 , S80N10R .
History: WMN05N70MM | FDB0105N407L | JCS9N50VC | IRF8736PBF | BL10N40-A | KF12N60F | HD30N06
Keywords - AONR32340C MOSFET datasheet
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History: WMN05N70MM | FDB0105N407L | JCS9N50VC | IRF8736PBF | BL10N40-A | KF12N60F | HD30N06



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