AONR32340C Specs and Replacement

Type Designator: AONR32340C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 11 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: DFN3X3EP

AONR32340C substitution

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AONR32340C datasheet

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AONR32340C

AONR32340C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AONR32340C

AONR32314 30V N-Channel MOSFET General Description Product Summary VDS Latest advanced trench technology 30V Low RDS(ON) ID (at VGS=10V) 17A High Current capability RDS(ON) (at VGS=10V) ... See More ⇒

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AONR32340C

AONR32318 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 50A Optimized for load switch RDS(ON) (at VGS=10V) ... See More ⇒

 7.3. Size:369K  aosemi
 aonr32320c.pdf pdf_icon

AONR32340C

AONR32320C 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: SVT077R5NT, SVT077R5ND, SVT077R5NS, WML38N60C2, WMK38N60C2, WMN38N60C2, WMM38N60C2, WMJ38N60C2, IRF9540N, HCS80R380S, HY3007P, HY3007M, HY3007B, HY3007PS, HY3007PM, NCE80H11, S80N10R

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs