N6006NZ Specs and Replacement

Type Designator: N6006NZ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

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N6006NZ datasheet

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N6006NZ

Data Sheet N6006NZ R07DS1020EC0100 Rev.1.00 N-channel MOSFET Feb 18, 2013 600V, 6A, 1.2 Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A) Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) High current... See More ⇒

Detailed specifications: HY3007PS, HY3007PM, NCE80H11, S80N10R, S80N10S, CMD5941, CMU5941, MMBF4860, 5N65, STP180N4F6, TK10P50W, LCS50P03, HCCW120R040H1, HCCZ120R040H1, VS2622AA, VS2622AD, VS2622AL

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