All MOSFET. N6006NZ Datasheet

 

N6006NZ Datasheet and Replacement


   Type Designator: N6006NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

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N6006NZ Datasheet (PDF)

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N6006NZ

Data SheetN6006NZ R07DS1020EC0100Rev.1.00N-channel MOSFET Feb 18, 2013600V, 6A, 1.2 Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 1.2 MAX. (VGS = 10 V, ID = 3.0 A) Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) High current

Datasheet: HY3007PS , HY3007PM , NCE80H11 , S80N10R , S80N10S , CMD5941 , CMU5941 , MMBF4860 , 4435 , STP180N4F6 , TK10P50W , LCS50P03 , HCCW120R040H1 , HCCZ120R040H1 , VS2622AA , VS2622AD , VS2622AL .

History: IRC630PBF | SML20L100F | APT10040LVFRG | NTD40N03R-1G | NTMS4807NR2G | NTGS3447PT1G | BUK453-60B

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