TK10P50W MOSFET. Datasheet pdf. Equivalent
Type Designator: TK10P50W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.7 V
Maximum Drain Current |Id|: 9.7 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm
Package: DPAK
TK10P50W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK10P50W Datasheet (PDF)
tk10p50w.pdf
TK10P50WMOSFETs Silicon N-Channel MOS (DTMOS)TK10P50WTK10P50WTK10P50WTK10P50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk10p60w.pdf
TK10P60WMOSFETs Silicon N-Channel MOS (DTMOS)TK10P60WTK10P60WTK10P60WTK10P60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk10p60w.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK10P60WFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
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