TK10P50W Specs and Replacement
Type Designator: TK10P50W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: DPAK
TK10P50W substitution
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TK10P50W datasheet
tk10p50w.pdf
TK10P50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10P50W TK10P50W TK10P50W TK10P50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
tk10p60w.pdf
TK10P60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10P60W TK10P60W TK10P60W TK10P60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒
tk10p60w.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK10P60W FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
Detailed specifications: NCE80H11, S80N10R, S80N10S, CMD5941, CMU5941, MMBF4860, N6006NZ, STP180N4F6, IRFB3607, LCS50P03, HCCW120R040H1, HCCZ120R040H1, VS2622AA, VS2622AD, VS2622AL, VS3510DS, VS3602GPMT
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